Condensed Matter Laboratory
The Condensed Matter Laboratory has facilities for electrical and
optical characterization of thin films and bulk materials. It is equipped
with a closed cycle optical cryostat, capable of operating in temperature
ranges from 4 K to 350 K. The cryostats work in conjunction with several
existing electromagnets capable of producing magnetic fields up to
approximately 2 Tesla. Various electronic equipment have been integrated
with the cryostat to form two electrical and magneto transport measurement
systems. This equipment includes current source, micro-voltmeter,
lock in amplifiers, temperature controller, and a LabView interface.
The laboratory also contains an Argon – Ion laser and Near Field
Optical Microscope for optical studies. Custom built Near Field Optical
Microscope allows subwavelength optical characterization and in-situ
modification of the samples of interest. A room temperature transport
measurement experimental set-up allows characterization of nanometer-scale
devices mounted on a standard chip-carrier.
Research Projects
Novel Photonic Materials Based on Charge – Ordered
Manganese Oxides
Current
demands in the areas of computing and communication require increasing
speed of computation and information transfer. One solution is to
replace "slow" electronic devices with "fast"
photonic ones. This requires the development of optical analogues
of electronic integrated circuits capable of routing, controlling
and processing optical signals. One of the promising approaches
is based on photonic band-gap materials, which allow control of
dispersion and propagation of light. The necessary condition for
the photonic band gap to appear is high (more than 2 to 1) refractive
index contrast within the photonic crystal. Creation of a photonic
band-gap material is a very difficult technological task.
Mixed valence manganese oxides exhibit unique photosensitivity properties,
such as permanent photo-induced reflectivity changes due to local
photoinduced insulator to metal transition. Unique and novel feature
of this experimental program is based on the extreme sensitivity
of the manganite materials to external fields, such as magnetic
field, temperature, external illumination, etc. In order to create
photonic structures, 500-1000 nm thin films of Bi1-xCaxMnO3 are
needed. These thin films are grown in Material Research Lab at Towson
University using a Pulsed Laser Deposition (PLD) system.
Nanometer scale Hall effect magnetic field detectors for
biotechnology

The ability to fabricate devices on the nanometer scale opens new
possibilities for cutting edge research in chemistry, biology, and
medicine. Nanotechnology could offer a means to manipulate and test
small biological objects such as DNA in an efficient and inexpensive
way. To detect or manipulate such biological objects magnetic fields
can be used because of their biocompatibility. Locally strong magnetic
fields do not harm biological material, and the converse statement
is also important: the electrolytic environment of most biological
agents neither screens, nor alters magnetic fields. To use magnetic
field for the detection and manipulation of biomolecules, biomolecules
should be attached to magnetic particles. These particles can then
be used to tag, or trace, biological functions and interactions
in a non-perturbing way. However, this field of research has been
lacking sensitive and effective magnetic field sensors. A successful
device must be fabricated on a nanometer size scale, and must be
sensitive to local magnetic fields that have field gradients characterized
by nanometer lengths. These sensors can be used for the study of
nanometer scale magnetic particles, and related biophysics and chemical
applications. As a first step to achieving this goal, Hall effect
field detectors with lateral dimensions of 1mm and smaller have
been fabricated in collaboration with the Naval Research Laboratory,
Washington DC. A transport measurement experimental set-up in the
Condensed Matter Laboratory allows students to study these unique
devises. The fabricated nanometer-scale devices are characterized
by measurements of the van der Pauw resistance, the Hall coefficient
and current-voltage characteristics.
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